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| BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features * * * * * * * Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current loading Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 949539 Applications Rectification, general purpose Mechanical Data Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Parts Table Part BYW52 BYW53 BYW54 BYW55 BYW56 Type differentiation VR = 200 V; IFAV = 2 A VR = 400 V; IFAV = 2 A VR = 600 V; IFAV = 2 A VR = 800 V; IFAV = 2 A VR = 1000 V; IFAV = 2 A SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics Part BYW52 BYW53 BYW54 BYW55 BYW56 Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power = 180 tp = 20 s half sine wave, Tj = 175 C tp = 10 ms, half sinewave Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFRM IFAV PR Value 200 400 600 800 1000 50 12 2 1000 Unit V V V V V A A A W Document Number 86049 Rev. 1.6, 14-Apr-05 www.vishay.com 1 BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Parameter Pulse energy in avalanche mode, non repetitive (inductive load switch off) i2* t-rating Junction and storage temperature range Test condition I(BR)R = 1 A, Tj = 175 C Part Symbol ER Value 20 Unit mJ i2*t Tj = Tstg 8 - 55 to + 175 A2*s C Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time Reverse recovery charge IF = 1 A VR = VRRM VR = VRRM, Tj = 100 C IR = 100 A, tp/T = 0.01, tp = 0.3 ms VR = 4 V, f = 1 MHz IF = 0.5 A, IR = 1 A, iR = 0.25 A IF = 1 A, di/dt = 5 A/s, VR = 50 V IF = 1 A, di/dt = 5 A/s Test condition Symbol VF IR IR V(BR) CD trr trr Qrr 18 4 4 200 Min Typ. 0.9 0.1 5 Max 1.0 1 10 1600 Unit V A A V pF s s nC Typical Characteristics (Tamb = 25 C unless otherwise specified) RthJA Therm. Resist. Junction/Ambient (K/W) 120 l 100 - Forward Current (A) l 10.000 80 60 40 20 0 0 5 10 15 20 25 30 l - Lead Length ( mm ) TL= constant 1.000 Tj = 175 C 0.100 Tj = 25 C 94 9101 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 16350 V F - Forward Voltage ( V ) Figure 1. Typ. Thermal Resistance vs. Lead Length I F 0.010 Figure 2. Forward Current vs. Forward Voltage www.vishay.com 2 Document Number 86049 Rev. 1.6, 14-Apr-05 BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors I FAV -Average Forward Current( A ) V R = VRRM half sinewave 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (C ) RthJA = 45 K/W l = 10 mm P - Reverse Power Dissipation ( mW ) R 2.5 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Tj - Junction Temperature ( C ) PR-Limit @100 % VR V R = VRRM PR-Limit @80 % VR RthJA = 100 K/W PCB: d = 25 mm 16351 16353 Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature 1000 CD - Diode Capacitance ( pF ) 40 V R = VRRM 35 30 25 20 15 10 5 0 0.1 16354 f = 1 MHz I R - Reverse Current (A) 100 10 1 25 16352 50 75 100 125 150 175 Tj - Junction Temperature (C ) 1.0 10.0 V R - Reverse Voltage ( V ) 100.0 Figure 4. Reverse Current vs. Junction Temperature Zthp-Thermal Resistance for PulseCond.(K/W) Figure 6. Diode Capacitance vs. Reverse Voltage 1000 VRRM = 1000 V, RthJA = 100K/W 100 tp/T = 0.5 tp/T = 0.2 10 tp/T = 0.1 tp/T = 0.05 tp/T = 0.02 1 10-5 tp/T = 0.01 10-4 10-3 10-2 10-1 10 0 10 1 Tamb = 60 C Tamb = 70C Tamb = 100C 10 0 10 1 102 I FRM - Repetitive Peak Forward Current ( A ) Tamb = 25C Tamb = 45C 94 9178 tp - Pulse Length ( s ) Figure 7. Thermal Response Document Number 86049 Rev. 1.6, 14-Apr-05 www.vishay.com 3 BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 3.6 (0.140)max. Cathode Identification ISO Method E 94 9538 0.82 (0.032) max. 26(1.014) min. 4.0 (0.156) max. 26(1.014) min. www.vishay.com 4 Document Number 86049 Rev. 1.6, 14-Apr-05 BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 86049 Rev. 1.6, 14-Apr-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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